The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 1999

Filed:

Mar. 24, 1997
Applicant:
Inventor:

Young Kwon Jun, Seoul, KR;

Assignee:

LG Semicon Co., Ltd., Chungcheongbuk-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257530 ; 257 50 ; 438600 ; 365 96 ;
Abstract

A programmable semiconductor element having an antifuse structure is disclosed. A first insulation film is formed on a silicon substrate. First and second conductors are formed on the first insulation film. The first and second conductors are spaced apart at a contact hole region. A second insulation film is formed on the first insulation film and the first and second conductors. The second insulation film includes a contact hole at a portion corresponding to the contact hole region. The second insulation film includes a recess adjacent to the contact hole. A conductor link is formed in the recess in the second insulation film. A third insulation film is formed over the conductor link.


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