The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Sep. 30, 1997
Applicant:
Inventor:
Hiroaki Akiyama, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257401 ; 257339 ; 257369 ; 257372 ;
Abstract
A CMOS semiconductor device comprises a well and a MOSFET adjacent to the well, wherein the distance between the channel region of the MOSFET is larger than the distance between the well and any of the source and drain of the MOSFET. The larger distance between the channel region and the well provides less fluctuation of the threshold voltage of the MOSFET.
Quick Actions:
Akiyama, Hiroaki. (1999). Semiconductor device having an insulated gate field effect transistor (U.S. Patent No. 5936290). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5936290
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile