The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Oct. 22, 1996
Applicant:
Inventor:
Nobuyoshi Takeuchi, Tokyo, JP;
Assignee:
NKK Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257336 ; 257344 ; 257345 ; 257408 ; 438163 ; 438179 ; 438286 ; 438305 ; 438306 ; 438307 ;
Abstract
A MOS transistor includes a semiconductor substrate of a first conductivity type having a major surface, a source and drain of a second conductivity type formed on the major surface to define a channel region therebetween, and a gate arranged in the channel region via an insulating film. The MOS transistor includes an impurity-implanted region of the first conductivity type located at a substrate portion which is deeper than the channel region and is shifted to a source side from a region corresponding to the channel region.
Takeuchi, Nobuyoshi. (1999). Mos transistor with impurity-implanted region (U.S. Patent No. 5936277). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5936277
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile