The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Apr. 29, 1997
Motohiro Toriyama, Aichi, JP;
Kiyoshi Hirao, Aichi, JP;
Manuel E Brito, Aichi, JP;
Syuzo Kanzaki, Aichi, JP;
Yasuhiro Shigegaki, Aichi, JP;
Abstract
An object of the present invention is to provide a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, and a method for producing the same, and the present invention relates to a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, characterized in that rodlike grains of silicon nitride with a minor diameter of 0.5 to 10 .mu.m and an aspect ratio of 10 to 100 are oriented in a single direction, and the rest of the structure other than the rodlike grains consists solely of pores with a porosity of 5 to 30%, and further the above-mentioned porous silicon nitride is produced by mixing rodlike particles of silicon nitride with a minor diameter of 0.5 to 10 .mu.m and an aspect ratio of 10 to 100 as the silicon nitride with an auxiliary that serves to bind the rodlike particles, forming a tape in which the silicon nitride rodlike particles are oriented in a single direction by sheet forming, extrusion forming, or another such forming process, and sintering this product in a nitrogen atmosphere after lamination and degreasing of it.