The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 1999

Filed:

Mar. 17, 1998
Applicant:
Inventors:

Thomas Bayer, Aidlingen-Dachtel, DE;

Johann Greschner, Pliezhausen, DE;

Samuel Kalt, Reutlingen, DE;

Klaus Meissner, Herrenberg-Kayh, DE;

Hans Pfeiffer, Ridgefield, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430313 ;
Abstract

The invention relates to a manufacturing method for a membrane mask suitable for particle beams with mask fields, which are bounded by thin support walls. The deep plasma etching for the formation of the support walls is halted shortly before reaching the membrane and the last .mu.m before the membrane removed by wet-chemical etching. A high etch selectivity can be achieved using an alkaline etching solution. The support walls 1 are turned by 45.degree. to the (110) direction or oriented parallel to the (100) plane, so that the structures restricted by (111) planes are avoided.


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