The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Nov. 27, 1996
Applicant:
Inventors:
Tetsuya Tada, Tsukuba, JP;
Toshihiko Kanayama, Tsuchiura, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
216 41 ; 216 51 ; 216 52 ; 216 66 ; 438945 ; 427533 ; 427534 ; 427537 ; 427552 ; 4272554 ;
Abstract
A method of fabricating nanometric structures on a substrate by dry etching includes setting the substrate at a temperature at which condensation of etching gas products of etching gas decomposed, recombined and reacted, or products of reactions between the etching gas and substrate material starts to occur, forming condensates at specific locations on the substrate. The condensates form an etching mask for the dry etching process.