The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1999
Filed:
Oct. 24, 1996
Koji Endo, Osaka, JP;
Masaki Shima, Kyoto, JP;
Sanyo Electric Co., Ltd., Moriguchi, JP;
Abstract
A photovoltaic element having improved conversion efficiency and improved light confining property as well as a method of manufacturing the photovoltaic element with superior productivity are provided. The photovoltaic element includes an n type single crystal silicon substrate having first and second main surfaces, an intrinsic amorphous silicon layer formed on the first main surface, a p type amorphous silicon layer formed thereon, a conductive thin film formed thereon, a collecting electrode formed thereon, an intrinsic amorphous silicon layer formed on the second main surface of n type single crystal silicon substrate, an n type amorphous silicon layer formed thereon, a conductive thin film formed thereon and a back electrode formed thereon. At a peripheral portion of a laminated portion including the intrinsic amorphous silicon layer formed on the first main surface of the n type single crystal silicon substrate, the p type amorphous silicon layer and the conductive thin film, a trench deep enough to reach at least the intrinsic amorphous semiconductor layer is formed.