The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 1999

Filed:

Aug. 01, 1997
Applicant:
Inventors:

Herng-Der Chiou, Tempe, AZ (US);

Lawrence Duane Mason, Mesa, AZ (US);

James B Hall, Chandler, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 13 ; 117 15 ; 117911 ;
Abstract

A single crystal ingot (10) is grown by first inserting a single crystal seed (14) into a melt (11) and pulling the seed (14) at a high pulling rate to grow a single crystal neck (15). The pulling rate is then altered to grow an overhang (18) with a diameter greater than that of the single crystal neck (15). An elongated body (19) is formed below the overhang (18) by adjusting the pulling rate. A multi-arm fixture (30) grabs the overhang (18) to alleviate the tensile and torsional stresses in the single crystal neck (15) that may be caused by the weight and the rotational motion of the single crystal ingot (10).


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