The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1999
Filed:
Feb. 25, 1998
Applicant:
Inventor:
Mitsuyoshi Nakamura, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438283 ; 438279 ; 438284 ; 438289 ; 438291 ;
Abstract
A semiconductor device having the high integration and great driving ability is provided. An upper gate oxide film is formed on a gate electrode. An upper drain region is formed on a lower drain region through an oxide film, and an upper source region is formed on a lower source region through the oxide film. A polysilicon region is formed on the upper gate oxide film provided between the upper drain region and the upper source region. The lower layer portion of the polysilicon region is defined as a channel region.
Nakamura, Mitsuyoshi. (1999). Method of manufacturing a semiconductor device (U.S. Patent No. 5933736). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5933736
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile