The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1999
Filed:
Mar. 11, 1997
Hideaki Nii, Kawasaki, JP;
Mizuki Ono, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
The proposed semiconductor device can provide a capacitor having an excellent capacitance controllability thereof and a high reliability thereof. A method of manufacturing a semiconductor device comprises the steps of: forming a first insulating film on a semiconductor substrate on which a lower capacitor electrode has been formed; removing the first insulating film at a capacitor forming region on the lower capacitor electrode; forming a second insulating film on the semiconductor substrate; forming a conductive film on the formed second insulating film; patterning the conductive film and the second insulating film, to leave both the films at least at the capacitor forming region; patterning the first insulating film, to form a contact hole with the lower capacitor electrode at a region other than the capacitor forming region; and dry etching the lower capacitor electrode, to remove a natural oxide film formed at a bottom of the contact hole.