The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1999
Filed:
Sep. 04, 1996
Rohm Co., Ltd., Kyoto, JP;
Abstract
A semiconductor laser including a first conductive type of lower clad layer, active layer, a second conductive type of upper first clad layer, the first conductive type of current blocking layer having a stripe shaped open portion, and the second conductive type of upper second clad layer laminated in order on the first conductive type of GaAs substrate, wherein each portion in contact with the lower clad layer, the active layer, the upper first and second clad layer and at least the upper second clad layer of the current blocking layer is composed of a compound semiconductor to be represented by a formula, in which (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (x is 0<x.ltoreq.1 in the lower and upper first, second clad layers, 0.ltoreq.x<1 in the active layer, a given value y is approximately 0.5 for each layer) within of each range of 0<x.ltoreq.0.75 in the portion in contact with the upper second clad layer of the current blocking layer.