The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 1999

Filed:

Oct. 21, 1997
Applicant:
Inventors:
Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03L / ;
U.S. Cl.
CPC ...
327333 ; 327 52 ; 327 55 ; 327541 ; 326 63 ; 326 80 ;
Abstract

In a level shift circuit having a bias circuit and an output circuit, the current consumption of the bias circuit can be suppressed, and further the delay of the output signal relative to the input signal can be reduced. The ratio circuit comprises a bias circuit block (5) composed of a transistor (1) connected to a high potential power source (7) and having a gate to which an input bias INBIAS is applied through a bias input terminal (11), a transistor (2) connected in series to the transistor (1) so as to function as a resistance, and a transistor (13) connected in series to the transistor (2) and a low potential power source (8); and an output circuit block (6) composed of a transistor (3) connected to the high potential power source (7) and having a gate to which an input signal IN is applied through an input terminal (10) and a drain from which an output signal OUT is derived to an output terminal (12), and a transistor (4) connected in series to the transistor (3) and a low potential power source (8). Further, a voltage VBIAS1 is applied from the drain of the transistor (1) to the gate of the transistor (4), and further a switching signal is applied from the drain of the transistor (3) to the gate of the transistor (13).


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