The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1999
Filed:
Feb. 05, 1997
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A microwave semiconductor integrated circuit having high isolation includes a wiring-side substrate including a transmission line in slots at a surface; an element-side substrate having an active element on a surface, the transmission line being embedded in the wiring-side substrate; and metal bumps electrically connecting the transmission line embedded in the wiring-side substrate to electrodes of the active element on the element-side substrate. Therefore, a connection between a transmission line and electrodes of an element, such as an FET or the like, can be easily realized without being affected by a difference in positional level between the transmission line and the electrodes. In addition, the element on the element-side substrate is not adversely affected by the subsequent fabrication of the slots and wiring layers and, therefore, the reliability of the integrated circuit is not adversely affected. Furthermore, since the element and the transmission line are mounted on separate substrates, focusing is easy during the exposure for forming masks used for etching the slots and wiring layers in the wiring-side substrate because there is no unevenness within the substrate surface, facilitating the fabrication of masks.