The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1999
Filed:
Oct. 14, 1998
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A high-breakdown-voltage semiconductor device has a first offset layer and a second offset layer the dosage of which is higher than that of the first offset layer. When the gate is in the ON state, the first offset layer functions as a resurf layer. When the gate is in the OFF state, part of the charge in the first offset layer is neutralized by a drain current flowing through an element having a low ON-resistance, however, the second offset layer functions as a resurf layer. When the drain current is �Acm.sup.-1 !, the amount of charge of electrons is q�C!, and the drift speed of carriers is .upsilon..sub.drift �cms.sup.-1 !, the dosage n.sub.2 of the second offset layer is given by n.sub.2 .gtoreq.I.sub.D /(q.upsilon..sub.drift)�cms.sup.-2 !.