The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1999
Filed:
Jun. 27, 1997
Applicant:
Inventors:
Michinori Irikawa, Yokohama, JP;
Kenichi Iga, Tokyo-to, JP;
Assignee:
The Furukawa Electric Co., Ltd., Toyko, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 15 ; 257 14 ; 257194 ;
Abstract
A field effect transistor having an excellent transfer conductance and an improved gate leakage current and breakdown voltage is provided. In the transistor, a multiquantum barrier structure 4 is arranged between a gate and a channel layer 3 along a channel layer 3 and having an effect of reflecting incident overflowing carriers a s waves in with with phase conditions of total reflection allowing mutual enhancement of the incident and reflected wave in a region between a channel layer 3 and a gate electrode 10 and/or in a region opposite to the gate electrode 10 relative to the channel layer 3.