The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1999
Filed:
Oct. 15, 1997
Applicant:
Inventors:
Toshihiko Iwanaga, Kanagawa, JP;
Masumitsu Ino, Kanagawa, JP;
Kikuo Kaise, Kanagawa, JP;
Takenobu Urazono, Kanagawa, JP;
Hiroyuki Ikeda, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438689 ; 438125 ; 438149 ; 438311 ; 438496 ; 438669 ; 438778 ; 438795 ; 438902 ;
Abstract
A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer dielectric which covers the element. A hydrogenation treatment which comprises the interlayer dielectric provided thereon a cap film for blocking hydrogen diffusion, so that water entrapped by the interlayer dielectric may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the cap film.