The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 1999

Filed:

Jun. 12, 1997
Applicant:
Inventors:

Chih-Hsien Wang, Hsin-Chu, TW;

Min-Liang Chen, Hsin-Chu, TW;

Thomas Chang, Taichung, TW;

Assignee:

Mosel Vitelic Inc., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438286 ; 438305 ; 438266 ;
Abstract

The present invention discloses a double poly metal oxide/nitride/oxide semiconductor electrically erasable programmable read only memory (EEPROM) for use in semiconductor memories. The EEPROM structure includes a select gate, an oxide.backslash.nitride.backslash.oxide layer, and a control gate. The control gate is formed on the oxide.backslash.nitride.backslash.oxide layer. A lightly doped drain (LDD) structure is formed adjacent to the drain and underneath the control gate.


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