The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 1999

Filed:

Apr. 23, 1997
Applicant:
Inventor:

Zhong Shou Huang, Mississauga, CA;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
M01L / ; M01L / ;
U.S. Cl.
CPC ...
438 36 ; 438160 ; 438166 ;
Abstract

In a method of fabricating a high resolution low voltage flat panel radiation imaging sensor having a radiation transducer having a radiation conversion layer of amorphous semiconductor and an electrode on one side thereof and an array of pixels arranged in rows and columns on an opposite side thereof, each pixel including a pixel electrode and storage capacitor and a charge readout device connected to the pixel electrode and the storage capacitor, the improvement comprising the step of shining light on selected regions of the radiation conversion layer which are aligned with the pixel electrodes to thereby crystallize the regions, resulting in a plurality of low resistivity and high charge mobility crystallized regions where the semiconductor material has been exposed to the light surrounded by high resistivity and low charge mobility regions where the semiconductor material has not been exposed to the light, for preventing lateral charge diffusion between respective ones of the low resistivity and high charge mobility regions.


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