The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
Feb. 28, 1997
Kevin B Hilgers, Phoenix, AZ (US);
Bruce G Smith, Tempe, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for fabricating an integrated field emission device (90) includes the steps of: (1) providing a substrate (52), (2) forming a conductive layer (54) on the substrate (52), (3) depositing a dielectric layer (56) on the conductive layer (54), (4) forming an emission well (62) in the dielectric layer (56), (5) forming an emissive film (72) over the dielectric layer (56) so that the emissive film (72) extends partially into the emission well (62) to define an emissive edge (94) within the emission well (62), and (6) selectively etching the dielectric layer (56) proximate to the emissive edge (94) so that electrons emitted by the emissive edge (94) are received by the conductive layer (54).