The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
Dec. 08, 1997
Jun-Young Jeon, Seoul, KR;
Samsung Electronics, Co., Ltd., Suwon, KR;
Abstract
A semiconductor memory device operable under a first power voltage and a second power voltage which are different from each other. The memory device includes a substrate of a first conductivity type, a well of a second conductivity type defined in said substrate, and first and second inverter circuits defined serially with one another on the substrate and common well. The first inverter circuit includes a first transistor of a second conductivity type on the substrate and a first transistor of a first conductivity type on the well for receiving a first power voltage and generating a first inverted output voltage in response to a first input voltage applied to gates of the respective first transistors. The second inverter circuit includes a second transistor of a second conductivity type on the substrate and a second transistor of a first conductivity type on the well for receiving a second power voltage and generating a second inverted output voltage in response to a second input voltage applied to gates of the respective second transistors.