The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
Dec. 18, 1997
Applicant:
Inventors:
Hiroyuki Hara, Fujisawa, JP;
Masataka Matsui, San Jose, CA (US);
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365154 ; 257903 ;
Abstract
This invention relates to P- and N-well regions where inverters constituting an SRAM cell are formed. The P-well region is divided into two parts, which are laid out on the two sides of the N-well region. Boundaries (BL11, BL12) are formed to run parallel to bit lines (BL, /BL). With this layout, diffusion layers (ND1, ND2) within the P-well regions can be formed into simple shapes free from any bent portion, reducing the cell area.