The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
Sep. 01, 1995
Applicant:
Inventors:
Mariko Takagi, Kawasaki, JP;
Ichiro Yoshii, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257528 ; 257529 ; 257530 ;
Abstract
A first electrode layer is formed on a semiconductor substrate, and surfaces other than a top surface thereof are buried in an insulation film, and the top surface makes the same surface as that of the insulation film. An antifuse insulation film is formed on a flat surface including the top surface of the first electrode layer. A second electrode layer is formed on the antifuse insulation film. An antifuse portion is formed by self-alignment at a cross point between the first and second electrode layers.