The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
May. 23, 1996
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor laser has a multiple-quantum well (MQW) structure overlying a first III-V compound semiconductor. The MQW includes a plurality of layer combinations including a strained well layer and a strained barrier layer, which are formed in a cyclic order. An ultra-thin intermediate film made of the first III-V compound semiconductor and having a thickness corresponding to from monoatomic layer to ten atomic layer is interposed between each strained well layer and each strained barrier layer. The intermediate film functions for preventing formation of mixed crystal formed between the well layer and the barrier layer, thereby improving current density threshold and other characteristics of the semiconductor laser.