The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
Mar. 14, 1997
Seong Woo Yang, Kyoungkido, KR;
Myung Goon Gil, Kyoungkido, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungkido, KR;
Abstract
The present invention provides a photomask for forming excellent photoresist patterns without the decrease of a critical area and the bulk effect caused by the topology of a photoresist on formed a wafer, by making the mask have different transmissivity in accordance with the topology of a wafer surface. In forming first contact holes and second contact holes in photoresist film formed on a wafer, wherein the first contact holes are deeper than the second contact holes, the photomask comprises a transparent substrate, transmissivity controlling films positioned over areas in which the second contact holes are formed, and light blocking patterns. The impurities control transmissivity, by absorbing light.