The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
Sep. 13, 1996
Applicant:
Inventor:
Yasuhiko Horie, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118724 ; 118715 ; 118725 ;
Abstract
Apparatus and method for manufacturing a semiconductor device in which silicon oxide films are formed using TEOS gas. Thereafter, oxygen gas containing ozone or oxygen radicals is introduced to a chamber and exhausted through a heated exhaust pipe. The stability of thickness of the silicon oxide films are enhanced.
Horie, Yasuhiko. (1999). Apparatus and method for manufacturing a semiconductor device (U.S. Patent No. 5928428). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5928428
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile