The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
Aug. 08, 1996
Applicant:
Inventor:
Kenneth Allen Aitchison, Los Gatos, CA (US);
Assignee:
Novellus Systems, Inc., San Jose, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
L23C / ;
U.S. Cl.
CPC ...
118715 ; 118724 ; 553851 ; 553852 ; 554344 ; 55440 ; 55442 ; 55443 ; 156345 ;
Abstract
A method and apparatus for removing gas species which can be deposited thermally from a semiconductor process exhaust gas is provided. To treat the exhaust gas, an exhaust gas reactor comprising an artificial substrate which is heated is used. The artificial substrate is a structure upon which high temperature chemical vapor deposition (HTCVD) reaction product is deposited. In particular, the HTCVD reaction product is deposited by contacting the exhaust gas with the heated artificial substrate.