The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1999
Filed:
Feb. 19, 1997
Shunpei Yamazaki, Tokyo, JP;
Naoaki Yamaguchi, Kanagawa, JP;
Yuugo Goto, Kanagawa, JP;
Satoshi Teramoto, Kanagawa, JP;
Katunobu Awane, Nara, JP;
Yoshitaka Yamamoto, Nara, JP;
Toshimasa Hamada, Nara, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There is disclosed a manufacturing method of highly integrated circuits with thin-film transistors (TFTs) for use as peripheral driver circuitry in active-matrix liquid crystal display (LCD) panel with a pixel array each having a charge transfer control TFT, capable of facilitating formation of contact holes otherwise being difficult in cases where an anode oxide film is formed on gate electrodes of TFTs and lead wires both of which are made of anodizable metal, such as aluminum. The method includes execution of anodization while causing a resist mask to be disposed on part of the lead wire and electrode made of aluminum, thereby partly eliminating formation of the anode oxide film on the lead wire and electrode. At a later step of fabrication, each contact is formed by use of such portion that has no anode oxide film formed thereon. This may allow aluminum to be employed as lead wires while enabling easy fabrication of contacts therefor.