The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1999
Filed:
Jun. 02, 1998
Applicant:
Inventors:
Yutaka Hayashi, Tsukuba, JP;
Masaaki Kamiya, Tokyo, JP;
Yoshikazu Kojima, Tokyo, JP;
Hiroaki Takasu, Tokyo, JP;
Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438151 ; 438157 ; 438164 ;
Abstract
A method of fabricating a semiconductor device comprises the steps of sequentially forming a first gate electrode and an insulating film over a transparent support substrate, forming a through-hole in the insulating film, forming a semiconductor single crystal silicon thin film over the transparent support substrate by epitaxial growth in the through-hole of the insulating film, forming a transistor element having a channel region formed in the semiconductor single crystal silicon thin film, and forming a second gate electrode over and electrically insulated from the channel region of the transistor element.