The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1999
Filed:
Feb. 07, 1997
Applicant:
Inventor:
Hisashi Takemura, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
445 50 ;
Abstract
A method is for use in fabricating a cold cathode comprising a sharp emitter (3) having a sharp tip that is formed on a silicon substrate 1b. The method comprises a first step of forming an intermediate emitter on the silicon substrate. The intermediate emitter has first and second emitter regions (33,34). The second emitter region is positioned under the first emitter region and has a width (diameter) larger than that of the first emitter region. The method further comprises a second step of processing the intermediate emitter into the sharp emitter by oxidation.