The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1999
Filed:
Jan. 14, 1997
Kenji Aoki, Tokyo, JP;
Ryoji Takada, Tokyo, JP;
Seiko Instruments Inc., , JP;
Abstract
A method of manufacturing a MOS field effect transistor comprises forming on a semiconductor substrate a first epitaxial growth layer having an impurity doping concentration lower than that of the semiconductor substrate, forming on the first epitaxial growth layer a second epitaxial growth layer having an impurity concentration higher than that of the first epitaxial growth layer and having a thickness equal to or less than a diffusion depth of a source and a drain region, and forming on the second eptiaxial growth layer a third epitaxial growth layer having an impurity concentration lower than that of the second epitaxial growth layer and having a thickness equal to or less than that of a depletion layer at a channel region.