The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 1999

Filed:

May. 06, 1997
Applicant:
Inventor:

Harlan Sur, San Leandro, CA (US);

Assignee:

VLSI Technology, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R / ; H01L / ;
U.S. Cl.
CPC ...
438 17 ; 438 14 ; 438 16 ; 438 18 ;
Abstract

An automated method for selectively locating fill pattern diffusion regions on a semiconductor substrate. In one embodiment, the present invention determines the locations of active diffusion regions on a semiconductor substrate. The present invention also determines the locations of interconnect lines on the semiconductor substrate. Next, the present invention creates a union of the location of the active diffusion regions on the semiconductor substrate and the location of the interconnect lines on the semiconductor substrate. The present invention uses this union to define allowable locations for placement of fill pattern diffusion regions on the semiconductor substrate such that the fill pattern diffusion regions are not disposed under the interconnect lines.


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