The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1999
Filed:
Oct. 30, 1997
Takayuki Kaida, Gifu-ken, JP;
Yukihiro Ohya, Saitama-ken, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A non-volatile semiconductor memory device is provided that includes a split gate type memory cell and a control unit. The split gate type memory cell has a floating gate electrode and a control gate electrode. The control unit counts a number of data rewritings and controls the voltage applied to the control gate electrode so that the Fowler-Nordheim tunnel current increases to sufficiently pull out the charge stored in the floating gate electrode when the number of data writings exceeds a predetermined number. This extends the life of the memory device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile