The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1999
Filed:
Jun. 06, 1995
Yoshikazu Ohno, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device has a memory cell array including MOS transistors and capacitors. Each capacitor include a first capacitor electrode, capacitor dielectric film, and a second capacitor electrode which confronts the first capacitor electrode with the dielectric film interposed therebetween. The first capacitor electrode includes a first-layer electrode having an upper and lower surfaces and a circumferential side surface, and a second-layer electrode which is connected electrically to the lower surface of the first-layer electrode and has a circumferential side surface located inner than the side surface of the first-layer electrode. The capacitor dielectric film is in contact with the upper surface and side surface of the first-layer electrode and spaced out from the side surface of the second-layer electrode. This electrode arrangement suppresses the emergence of a leakage current at the side surface of the second-layer electrode.