The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1999
Filed:
Jan. 24, 1996
Applicant:
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Kyungki, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 57 ; 257 59 ; 257 62 ; 257 66 ; 257 72 ;
Abstract
An amorphous silicon thin-film transistor as a switching element for a thin-film transistor liquid crystal display, having improved characteristics by making better an ohmic contact layer and an active layer, and a method of fabricating the same are provided. A wide energy-band gap .mu.c-Si(:Cl) fabricated using a mixed gas including SiH.sub.2 Cl.sub.2 is used as the ohmic contact layer, so that yield and productivity can be improved. The active layer is formed of .mu.c-Si:H(:Cl) with low hydrogen content and high stability. Off-current during illumination is sharply decreased, to thereby remarkably reduce leakage current when illumination is performed by backlighting.