The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1999
Filed:
Jul. 16, 1997
Seiji Nishimoto, Saitama, JP;
Honda Giken Kogyo Kabushiki Kaisha, Tokyo, JP;
Abstract
A thermoelectric material which exhibits an excellent thermoelectric performance even when it is used at elevated temperatures is shown and described. A thermoelectric material is provided having conductive layers made of a first semiconductor only, and barrier layers made of a second semiconductor only, that are alternatingly formed one upon the other. The interface of the barrier layer relative to the conductive layer is roughly formed to include a plurality of protuberances and a plurality of recesses, and the interface of the conductive layer relative to the barrier layer is roughly formed to fit the interface of the barrier layer. The ratio Ry/t of the maximum height Ry of the protuberance on the barrier layer to the thickness t of the barrier layer is set to be Ry/t.gtoreq.0.1. This makes it possible to enhance the strength of the heterojunction interface between the barrier layer and the conductive layer and to improve the heat resistance.