The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 1999

Filed:

Sep. 30, 1997
Applicant:
Inventor:

Hyeong Soo Kim, Ichon-shi, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ;
Abstract

A mask structure used in the lithography process for semiconductors is disclosed. The mask structure comprises upper and lower masks, a light-blocking pattern formed on a region where the upper mask and the lower masks overlap one another, wherein a line width of the light-blocking pattern in the overlapping region is larger than that of in a non-overlapping region or a dummy light-blocking pattern having minute line width is formed between the light-blocking patterns so that the excessive light could not reach to the overlapping region of the upper and the lower masks due to repeated exposure in the stitching exposure process for forming a mask pattern by overlapping the masks in case that a chip size is larger than an exposure area exposed by an exposure equipment.


Find Patent Forward Citations

Kim, Hyeong. (1999). Mask for use in stitching exposure process (U.S. Patent No. 5922495). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5922495

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…