The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 1999

Filed:

May. 19, 1997
Applicant:
Inventors:

Tatsuo Saishu, Yokohama, JP;

Kohki Takatoh, Yokohama, JP;

Hideo Hama, Ichihara, JP;

Yukari Sakai, Kisarazu, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K / ; C09K / ; G02F / ;
U.S. Cl.
CPC ...
25229962 ; 25229901 ; 349143 ; 349182 ;
Abstract

An LCD which having a high response speed, a wide viewing angle and a high contrast and capable of displaying high-quality gray-scale images at normal temperature. The LCD comprises an array substrate, a counter substrate opposing the array substrate, pixel electrodes arranged on the the array substrate in rows and columns, each connected to an active element, a first orientation film provided on the pixel electrodes, a counter electrode opposing the pixel electrodes, arranged on the counter substrate, a second orientation film provided on the counter electrode, rubbed in a direction slightly inclined to a direction in which the first orientation has been rubbed, and a layer of antiferroelectric liquid crystal sealed in a gap between the first and second orientation films, the antiferroelectric liquid crystal being a smectic liquid crystal which contains an antiferroelectric liquid crystal compound represented by R.sup.1 (O)--Zm--Y--E--COO--C*HX--R.sup.4. The liquid crystal exhibits transmittance which increases monotonically with applied voltage and exhibits a memory margin M ranging from -1 to 0 at normal temperature. The memory margin M is given as M=(V.sub.10 -V'.sub.90)/(V.sub.90 -V.sub.10).


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