The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1999
Filed:
Dec. 06, 1996
Applicant:
Inventor:
Sam-Hyo Hong, Spanga, SE;
Assignee:
Telefonaktiebolaget Lm Ericsson, Stockholm, SE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438654 ; 438653 ; 438643 ; 438644 ; 438650 ; 438655 ; 438656 ;
Abstract
Two metallization schemes of PtSi/TiW/TiW(N)/Au (Type I) and PtSi/TiW/TiW(N)/TiW/Au (Type II) and associated process are described for microcircuit interconnections. The metallization schemes and process are capable of IC-interconnections with a metal-pitch as small as 1.5 .mu.m, or even smaller. The metallization schemes are reliable for continuous high temperature and high current operations.
Hong, Sam-Hyo. (1999). Electromigration resistant metallization process microcircuit (U.S. Patent No. 5920794). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5920794
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