The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1999
Filed:
Apr. 25, 1997
Applicant:
Inventor:
Yasushi Kinoshita, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257499 ; 257376 ; 257509 ;
Abstract
In a semiconductor device having a PN junction element separating region, in order to reduce a width of the PN junction element separating region without sacrifice of a punch-through breakdown voltage of the PN junction element separating region, the PN junction element separating region is composed of an upper impurity layer of a first conductivity type having low impurity density and a lower impurity layer of the first conductivity type having a high impurity density and a width of the upper impurity layer is smaller than a width of the lower impurity layer.