The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1999
Filed:
Dec. 09, 1997
Nobukazu Oba, Gamagori, JP;
Toshio Ikuta, Handa, JP;
Minekazu Sakai, Kariya, JP;
Tsuyoshi Fukada, Aichi-gun, JP;
Yasutoshi Suzuki, Okazaki, JP;
Denso Corporation, Kariya, JP;
Abstract
A semiconductor pressure detection device includes a diaphragm formed at a portion of a P- conductivity type semiconductor substrate having a reduced thickness. Gauge resistors are formed on the surface of an N- conductivity type semiconductor layer formed on the substrate. An N+ conductivity type diffusion layer is formed in the N- conductivity type semiconductor layer to fix the electric potential of the N- conductivity type layer. The first conductivity type area surrounds the diaphragm. Therefore, when the N- conductivity type area is supplied with electric potential, the potential gradient in the N- conductivity type layer is small. Thus, the leakage current which flows to a pn junction between the gauge resistors and the N- conductivity type area is reduced.