The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1999
Filed:
Jul. 30, 1997
Applicant:
Inventors:
Robert Bruce Davies, Tempe, AZ (US);
Peter J Zdebel, Mesa, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257353 ; 257354 ; 438180 ; 365182 ;
Abstract
A semiconductor device (10) is formed in a pedestal structure (16) overlying a semiconductor substrate (11). The semiconductor device (10) includes a source region (44) and a drain region (45) that contact the corners (13) of the pedestal structure (16). Electrical connection to the source region (44) and the drain region (45) is provided by a conductive layer (28) that contacts the sides (12) and corners (13) of the pedestal structure (16).
Davies, Robert. (1999). Short channel field effect semiconductor device and method of making (U.S. Patent No. 5920095). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5920095
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile