The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 1999
Filed:
Dec. 14, 1995
Hitoshi Shimizu, Tokyo, JP;
Kazuaki Nishikata, Tokyo, JP;
Toru Fukushima, Tokyo, JP;
Michinori Irikawa, Tokyo, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
The present invention provides a semiconductive light-emitting device involving a light-emitting layer of the multilayer strained quantum well structure that has a plurality of quantum well layers and a plurality of barrier layers, where each of said quantum well layers is constituted of a semiconductive crystal subjected to intraplanar compressive strain; each of the barrier layers is constituted of semiconductor crystal of AlInAs, AlGaInAs or AlGaInAsP. For high differential gain, each quantum well layer is 6nm thick or less, and the summed quantum well layers measure 13 to 1000 nm in thickness. Likewise, the invented scheme produces a light-emitting device involving a light-emitting layer of the multilayer strain compensation quantum well structure that has a plurality of quantum well layers and a plurality of barrier layers, where each of said quantum well layers is constituted of a semiconductive crystal subjected to intraplanar compressive strain; each of the barrier layers is constituted of semiconductor crystal of AlInAs, AlGaInAs or AlGaInAsP. For high differential gain, each quantum well layer is 6nm thick or less, and the summed quantum well layers measure 13 to 1000 nm in thickness.