The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 1999
Filed:
Jan. 29, 1996
Atsuko Yamashita, Yokosuka, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
In the method of the present invention, for manufacturing a semiconductor device having a multilayered wiring structure, with an improved version of step of forming an interlayer insulation film, an aromatic or heterocyclic compound containing an Si--H group, and H.sub.2 O.sub.2 are introduced in a reaction chamber in which a semiconductor device is contained, and they are made to react with each other in a vacuum atmosphere of 665 Pa or lower at a temperature in a range of -10.degree. C. to +10.degree. C. Thus, an intermediate reaction product having an excellent planarization property in which a reflow thereof is promoted due to the Si--H group, is formed on the semiconductor substrate. The intermediate reaction product is then subjected to a heat treatment so as to induce a dehydration reaction, thereby obtaining a silicon-based oxide film having a reflow shape, a network structure and a low dielectric constant.