The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 1999
Filed:
Sep. 16, 1997
Abstract
A method for forming a dynamic random access memory device includes the step of forming a memory cell access transistor on a semiconductor substrate wherein the memory cell access transistor includes a source/drain region at a surface of the semiconductor substrate. An insulating layer is formed on the semiconductor substrate and on the memory cell access transistor wherein the insulating layer has a contact hole therein exposing a portion of the source/drain region of the substrate. A first conductive layer is chemical vapor deposited on the exposed portion of the source/drain region of the substrate, and a second conductive layer is physical vapor deposited on the first conductive layer opposite the substrate. A dielectric layer is formed on the second conductive layer opposite the substrate, and a third conductive layer is formed on the dielectric layer opposite the substrate.