The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 1999

Filed:

Sep. 04, 1997
Applicant:
Inventors:

Jou Ming-Jiunn, Hsin-Chu, TW;

Lee Biing-Jye, Hsin-Chu, TW;

Jacob C Tarn, Hsin-Chu, TW;

Assignee:

Epistar Co., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 94 ; 257 96 ; 257 98 ; 257103 ;
Abstract

A high bandgap material is used as a cladding layer to confine the carrier overflow in a aluminum-gallium-indium-phosphide light emitting diode. The quantum efficiency is improved. The use of this high bandgap material as a window material also prevents current crowding. The efficiency can further be improved by using a Distributed Bragg Reflector in the structure to reflect light, and a buffer layer to reduce interface dislocation.


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