The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 1999
Filed:
Aug. 08, 1996
Applicant:
Inventors:
Leon Goldstein, Chaville, FR;
Jean-Louis Gentner, Gif sur Yvette, FR;
Philippe Jarry, Sucy en Brie, FR;
Assignee:
Alcatel Optronics, Paris, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438735 ; 438 39 ; 438504 ; 438694 ; 438913 ; 438944 ; 117 97 ; 117103 ; 156643 ;
Abstract
In order to facilitate resuming molecular beam epitaxy after etching a substrate or an epitaxial layer, the etching method is implemented in an ultra-high vacuum, and it consists in producing at least two simultaneous chemical beams converging towards the substrate or the layer, the beams being formed of substances, each of which is capable of reacting with elements of different types in the substrate or the layer so as to form volatile compounds. Application in particular to manufacturing photonic and optoelectronic components.