The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 1999
Filed:
Dec. 10, 1996
Haruhiko Koyama, Chiba-ken, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A method of fabricating a semiconductor device includes steps of forming a first insulating film, a conductive film, a second insulating film and a selected film in sequence on a substrate. Next, a first resist pattern is formed in a first region on the selected film by means of photo-lithography. The selected film is patterned by using the first resist pattern, after which the first resist pattern is removed. Next, a second resist pattern is formed in a second region on the surface of at least the second insulating film by means of electron beam lithography. The second insulating film is patterned by using the second resist pattern, after which the second resist pattern is removed. The conductive film is then patterned by using the patterned second insulating film as a mask. The selected film is provided with an etching characteristic substantially the same as that of the conductive film so that remaining portions thereof are removed during the conductive film patterning step.