The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 1999
Filed:
Aug. 22, 1997
Applicant:
Inventor:
Sang-pil Sim, Suwon, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-city, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438397 ; 257306 ;
Abstract
A method for forming a storage electrode having increased area in a highly-integrated semiconductor device. In the method, a trench is formed in a thick insulating interlayer deposited on a semiconductor substrate. Hemispherical grains are formed on the surface of the trench to increase the surface area of the trench. A conductive layer for forming a storage electrode is formed in the surface of the trench. The conductive layer is patterned with a CMP process or etch back process to form a storage electrode. Forming a capacitor dielectric film over the electrode and a plate electrode over the film completes the process.