The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 1999

Filed:

Apr. 20, 1998
Applicant:
Inventors:

Lorenzo Fratin, Buccinasco, IT;

Carlo Riva, Renate, IT;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438302 ; 438525 ; 438307 ;
Abstract

The method includes the following steps: delimiting active areas on a substrate, forming gate electrodes insulated from the substrate on the active areas, and subjecting the front surface of the substrate to several implantation steps with doping ion beams to form source and drain regions with the use of the gate electrodes as masks. The direction of the implantation beam is defined by an angle of inclination to the front surface and by an orientation to a reference line on the front surface. To avoid performing numerous implantation steps without foregoing channels of uniform and constant length, the widths of the gate electrode strips are determined at the design stage in relation to the orientation of the strips to the reference line and on the orientation of the directions of the implant beams.


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