The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 1999
Filed:
Jul. 08, 1997
Shigeaki Noumi, Tokyo, JP;
Kazuhiko Noguchi, Tokyo, JP;
Takeshi Kubota, Tokyo, JP;
Masami Hayashi, Tokyo, JP;
Takeshi Morita, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Method for manufacturing TFTs including steps of forming a control electrode and control electrode line on a substrate, forming insulating film on the control electrode and the control electrode line, cleaning the substrate with the insulating film formed by a chemical or physical means, forming oxide film on the surface of the control electrode and control electrode line exposed by a film lacking portion generated in the insulating film after cleaning, forming a semiconductor layer via the insulating film on the control electrode, and forming a pair of electrodes constituting a semiconductor element together with the semiconductor layer.